Temperature Window: 50 – 500 °C
Liquid Chemical Inlets: Up to 6
Gaseous Chemical Inlets: Up to 4
Footprint: 60″ L x 32″ W x 76″ H
Capacity: Up to 200mm wafers
5mm height clearance for coupons and objects
Substrate Handling: Manual single wafer loading
Chemistries: Al2O3, SiO2, AZO, TiO2, GaN, TiN, Bi2O3, Pt, Co, Cu, Ta205, Hf203, MLD
THEIA is ideal for exploration of newly developed ALD precursors. At the initial stage, ALD precursors are often extremely expensive ($1,000/gm is not unusual) and are available in very small quantities. Users also benefit from the many mature high productivity ALD processes that include HfO2, ZrO2, Ta2O5 SiO2, <300°C TiN, BN, GaN, Nb3N5 and more, available as turn-key processes from Forge Nano. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with up to 1,000 X enhanced area.
Applications: Copper Barrier, ALD-Cap, Optical, Adhesion/Seeding, TCOs
Design: THEIA is the only R&D tool for ALD that delivers blazing fast deposition compatible with large-scale production. With Forge Nano’s patented SMFD-ALD™, new powerful capabilities are finally available in a low cost system that fits most R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Proprietary sources and processes enable new applications with unprecedented reproducibility and control. Film growth is monitored with better than 5% of monolayer resolution with an integrated QCM for finer process exploration and optimization and the finest growth details. THEIA allows you to unleash the full potential of atomic layer deposition.
Add Ons: Ozone Generator, QCM, Plasma